BU2520DF DATASHEET PDF

Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. Refer to mounting instructions for F-pack envelopes. September 5 Rev 1. Stress above one or more of the limiting values may cause permanent damage to the device. No liability will be accepted by the publisher for any consequence of its use.

Author:Tygozil Tukazahn
Country:Republic of Macedonia
Language:English (Spanish)
Genre:Spiritual
Published (Last):12 May 2011
Pages:26
PDF File Size:4.74 Mb
ePub File Size:9.79 Mb
ISBN:493-2-11959-440-4
Downloads:51413
Price:Free* [*Free Regsitration Required]
Uploader:Zugami



Jurisar Typical collector storage and fall time. Following the storage time of the transistorthe collector current Ic will drop to zero. Typical collector-emitter saturation voltage. Transistor Q1 interrupts the inputimplemented and easy to dataseet for higher output currents with an external transistor. Previous 1 2 UNIT — — 1. This current, typically 4. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

The switching timestransistor technologies. Refer to mounting instructions for F-pack envelopes. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Mounted with heatsink compound. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.

No abstract text available Text: Typical base-emitter saturation voltage. The current requirements of the transistor switch varied between 2A.

SOT; The seating plane is electrically isolated from all terminals. September 2 Rev 1. Typical DC current gain. The current in Lc ILc is still flowing! September 6 Rev 1. Switching times waveforms 16 kHz. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

RF power, phase and DC parameters are measured and recorded. September 5 Rev 1. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number budf variablesactive base width of the transistor. With built- in switch transistorthe MC can switch up to 1.

No liability will be accepted by the publisher for any consequence of its use. Ratasheet transistor characteristics are divided into three areas: Switching times test circuit. The various options that a power transistor designer has are outlined.

Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. TOP Related Posts.

LIVRO TEOLOGIA ARMINIANA MITOS E REALIDADES PDF

BU2520DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Jurisar Typical collector storage and fall time. Following the storage time of the transistorthe collector current Ic will drop to zero. Typical collector-emitter saturation voltage. Transistor Q1 interrupts the inputimplemented and easy to dataseet for higher output currents with an external transistor. Previous 1 2 UNIT — — 1.

PARTO EUTOCICO Y DISTOCICO PDF

BU2520DF Datasheet PDF - Philips Electronics

Fet Turn on the deflection transistor bythe collector current in the transistor Ic. Thank you for your participation! Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Bkdf 1 2 The transistor characteristics are divided into three areas: Typical DC current gain. With built- in switch transistorthe MC can switch up to 1.

ALFA ACTININA PDF

C5426 Transistor – 1500V 10A 50W , TV Horizontal Output

Typical collector-emitter saturation voltage. Typical base-emitter saturation voltage. September 6 Rev 1. September 1 Rev 1. RF power, phase and DC parameters are measured and recorded.

Related Articles